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Er in molecular beam epitaxy grown GaAs/AlGaAs structures

Authors :
Gusev, O.B.
Pineas, J.P.
Bresler, J.P.
Lindmark, M.S.
Khitrova, G.
Gibbs, H.M.
Yassievich, I.N.
Zakharchenya, B.P.
Masterov, V.F.
Source :
Journal of Applied Physics. August 15, 1997, Vol. 82 Issue 4, p1815, 9 p.
Publication Year :
1997

Abstract

Erbium (Er) in molecular beam epitaxy-grown GaAs/AlGaAs structures are discussed. High-resolution PL spectra show that three types of Er centers exist. They differ in positions of fine structure lines, temperature dependence and PL lifetimes.

Subjects

Subjects :
Physics -- Usage
Epitaxy -- Usage
Erbium -- Observations
Gallium arsenide -- Observations
Photoluminescence -- Research
Semiconductors -- Research
Physics

Details

ISSN :
00218979
Volume :
82
Issue :
4
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.60382322

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