Photoluminescence excitation measurements on erbium implanted GaN

Authors :: Torvik, J.T.
Feuerstein, R.J.
Qiu, C.H.
Pankove, J.I.
Namavar, F.
Source :: Journal of Applied Physics. August 15, 1997, Vol. 82 Issue 4, p1824, 4 p.
Publication Year :: 1997
Abstract: Temperature dependence of the optical excitation cross-section of erbium (Er) implanted n-type GaN has been studied with photoluminescence excitation spectroscopy. Photoluminescence excitation spectra showing several Stark splittings had a complex dependence on temperature. Excitation wavelengths were 770-1010 nm, at room temperature and 77K.