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Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress

Authors :
Vogel, Eric M.
Suehle, John S.
Edelstein, Monica D.
Wang, Bin
Chen, Yuan
Bernstein, Joseph B.
Source :
IEEE Transactions on Electron Devices. June, 2000, Vol. 47 Issue 6, p1183, 9 p.
Publication Year :
2000

Abstract

Ultrathin silicon dioxide was examined for reliability under substrate hot-electron and constant voltage tunneling stresses.

Subjects

Subjects :
Metal oxide semiconductor field effect transistors -- Research
Tunneling (Physics) -- Usage
Business
Electronics
Electronics and electrical industries

Details

ISSN :
00189383
Volume :
47
Issue :
6
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.65013196

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