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A novel high-voltage sustaining structure with buried oppositely doped regions
- Source :
- IEEE Transactions on Electron Devices. June, 2000, Vol. 47 Issue 6, p1280, 6 p.
- Publication Year :
- 2000
-
Abstract
- A sustaining high-voltage structure having buried oppositely doped areas is presented.
Details
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.65013210