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Tunnel magnetoresistance devices processed by oxidation in air and UV assisted oxidation in oxygen
- Source :
- IEEE Transactions on Electron Devices. April, 2000, Vol. 47 Issue 4, p697, 5 p.
- Publication Year :
- 2000
-
Abstract
- Sputter deposition of Co,A1 and NiFe on oxidized Si wafers was used to process tunnel magnetoresistance devices.
Details
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.65092780