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Point defect injection during nitrous oxidation of silicon at low temperatures
- Source :
- Journal of Applied Physics. Feb 1, 2000, Vol. 87 Issue 3, p1103, 7 p.
- Publication Year :
- 2000
-
Abstract
- The interstitial injection during nitrous oxidation of silicon at low temperatures was monitored using dislocation loops and boron-doped delta layers.
- Subjects :
- Boron -- Usage
Oxidation-reduction reaction -- Research
Silicon -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 87
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.65489833