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Well-width dependence of the ground level emission of GaN/AlGan quantum wells

Authors :
Bonfiglio, A.
Lomascolo, M.
Traetta, G.
Cingolani, R.
di Carlo, A.
Della Sala, F.
Lugli, P.
Botchkarev, A.
Morkoc, H.
Source :
Journal of Applied Physics. March 1, 2000, Vol. 87 Issue 5, p2289, 4 p.
Publication Year :
2000

Abstract

A new study investigates GaN/AlGaN quantum wells characterized by different structural and strain distribution parameters.

Details

ISSN :
00218979
Volume :
87
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.65646556