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Characterization of deep impurities in semiconductors by terahertz tunneling ionization
- Source :
- Journal of Applied Physics. April 15, 2000, Vol. 87 Issue 8, p3843, 7 p.
- Publication Year :
- 2000
-
Abstract
- A method to characterize deep impurities in semiconductors using tunneling ionization in high frequency fields, is presented.
Details
- ISSN :
- 00218979
- Volume :
- 87
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.67346928