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Avalanche multiplication in submicron A1xGa1-xAs/GaAs multilayer structures
- Source :
- Journal of Applied Physics. Sept 1, 2000, Vol. 88 Issue 5, p2601, 8 p.
- Publication Year :
- 2000
-
Abstract
- Electron and hole multiplication properties were measured to determine the role of band edge discontinuities on ionization rates in A1xGa1-xAs/GaAs structures.
- Subjects :
- Thin films, Multilayered -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 88
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.67687096