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New Findings from Beijing Institute of Technology Describe Advances in Electron Devices (Enabling Continuous Cu Seed Layer for Deep Through-silicon-vias With High Aspect Ratio By Sequential Sputtering and Electroless Plating)

Source :
Electronics Newsweekly. October 26, 2021, 236
Publication Year :
2021

Abstract

2021 OCT 26 (VerticalNews) -- By a News Reporter-Staff News Editor at Electronics Newsweekly -- Fresh data on Electron Devices are presented in a new report. According to news reporting [...]

Subjects

Subjects :
Silicon -- Reports
Electronics

Details

Language :
English
ISSN :
19441630
Database :
Gale General OneFile
Journal :
Electronics Newsweekly
Publication Type :
News
Accession number :
edsgcl.680035015