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Degradation of oxides and oxynitrides under hot hole stress

Authors :
Zhang, J.F.
Sii, H.K.
Groeseneken, Guido
Degraeve, R.
Source :
IEEE Transactions on Electron Devices. Feb, 2000, Vol. 47 Issue 2, p378, 9 p.
Publication Year :
2000

Abstract

A new study investigates the effect of nitridation on hot hole injection by comparing oxynitrides and oxides.

Subjects

Subjects :
Complementary metal oxide semiconductors -- Research
Metal oxide semiconductor field effect transistors -- Research
Business
Electronics
Electronics and electrical industries

Details

ISSN :
00189383
Volume :
47
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.69379340

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