Back to Search
Start Over
Optimization of the specific on-resistance of the COOLMOS TM
- Source :
- IEEE Transactions on Electron Devices. Feb, 2001, Vol. 48 Issue 2, p344, 5 p.
- Publication Year :
- 2001
-
Abstract
- Optimized values for physical and geometrical parameters of p and n regions in the COOLMOS voltage sustaining layer, are reported.
Details
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.75199066