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Optimization of the specific on-resistance of the COOLMOS TM

Authors :
Chen, Xing-Bi
Sin, Johnny K.O.
Source :
IEEE Transactions on Electron Devices. Feb, 2001, Vol. 48 Issue 2, p344, 5 p.
Publication Year :
2001

Abstract

Optimized values for physical and geometrical parameters of p and n regions in the COOLMOS voltage sustaining layer, are reported.

Subjects

Subjects :
Metal oxide semiconductor field effect transistors -- Research
Business
Electronics
Electronics and electrical industries

Details

ISSN :
00189383
Volume :
48
Issue :
2
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.75199066

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