An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique

Authors :: Lee, Sang Yun
Cetiner, Bedri Artug
Torpi, Hamid
Cai, S.J.
Li, Jiang
Alt, K.
Chen, Y.L.
Wen, Cheng P.
Wang, Kang L.
Itoh, Tatsuo
Source :: IEEE Transactions on Electron Devices. March, 2001, Vol. 48 Issue 3, p495, 7 p.
Publication Year :: 2001
Abstract: A novel gallium nitride-based high electron mobility transistor power amplifier design is presented that uses an artificial neural network modeling technique.

Subjects :: High-electron-mobility transistors -- Research
Neural networks -- Usage
Transistors -- Research
Business
Electronics
Electronics and electrical industries

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