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Using porous silicon as semi-insulating substrate for beta-SiC high temperature optical-sensing devices
- Source :
- IEEE Transactions on Electron Devices. April, 2001, Vol. 48 Issue 4, p801, 3 p.
- Publication Year :
- 2001
-
Abstract
- Research into the availability of using porous silicon as semi-insulating substrate for beta-SiC high temperature optical sensing devices is presented. The high resistivity and the flexibility of the porous silicon improve the high temperature optical performance of the beta-SiC device.
Details
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.75200422