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Using porous silicon as semi-insulating substrate for beta-SiC high temperature optical-sensing devices

Authors :
Hsieh, W.T.
Fang, Y.K.
Wu, K.H.
Lee, W.J.
Ho, J.J.
Ho, C.W.
Source :
IEEE Transactions on Electron Devices. April, 2001, Vol. 48 Issue 4, p801, 3 p.
Publication Year :
2001

Abstract

Research into the availability of using porous silicon as semi-insulating substrate for beta-SiC high temperature optical sensing devices is presented. The high resistivity and the flexibility of the porous silicon improve the high temperature optical performance of the beta-SiC device.

Details

ISSN :
00189383
Volume :
48
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.75200422