Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: modeling and measurements

Authors :: Boudrissa, Mustafa
Delos, Elisabeth
Gaquiere, C.
Rousseau, Michel
Cordier, Yvon
Theron, Didier
De Jaeger, Jean Claude
Source :: IEEE Transactions on Electron Devices. June, 2001, Vol. 48 Issue 6, p1037, 8 p.
Publication Year :: 2001
Abstract: The modeling and measurements of metamorphic high-electron mobility transistors are presented. Enhancement mode Al0.66In0.34As/Ga0.67In0.33As structures are used.

Subjects :: High-electron-mobility transistors -- Research
Semiconductors -- Research
Business
Electronics
Electronics and electrical industries

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