Cite
'Paradoxes' of carrier lifetime measurements in high-voltage SiC diodes
MLA
Mnatsakanov, Tigran T., et al. “‘Paradoxes’ of Carrier Lifetime Measurements in High-Voltage SiC Diodes.” IEEE Transactions on Electron Devices, vol. 48, no. 8, Aug. 2001, p. 1703. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.77488162&authtype=sso&custid=ns315887.
APA
Mnatsakanov, T. T., Levinshtein, M. E., Ivanov, P., Palmour, J. W., Rumyansev, S. L., Singh, R., & Yurkov, S. N. (2001). “Paradoxes” of carrier lifetime measurements in high-voltage SiC diodes. IEEE Transactions on Electron Devices, 48(8), 1703.
Chicago
Mnatsakanov, Tigran T., Michael E. Levinshtein, Pavel Ivanov, John W. Palmour, Sergey L. Rumyansev, Ranbir Singh, and Sergei N. Yurkov. 2001. “‘Paradoxes’ of Carrier Lifetime Measurements in High-Voltage SiC Diodes.” IEEE Transactions on Electron Devices 48 (8): 1703. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.77488162&authtype=sso&custid=ns315887.