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Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN
- Source :
- Journal of Applied Physics. July 1, 2001, Vol. 90 Issue 1, p252, 8 p.
- Publication Year :
- 2001
-
Abstract
- Material growth method and Mg doping effects on Er3+ photoluminescence in Er-implanted GaN are examined.
- Subjects :
- Gallium nitrate -- Research
Photoluminescence -- Observations
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 90
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.78827175