Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

Authors :: Kim S.
Henry, R.L.
Wickenden, A.E.
Koleske, D.D.
Rhee, S.J.
White, J.O.
Myoung, J.M.
Kim, K.
Li, X.
Coleman, J.J.
Bishop, S.G.
Source :: Journal of Applied Physics. July 1, 2001, Vol. 90 Issue 1, p252, 8 p.
Publication Year :: 2001
Abstract: Material growth method and Mg doping effects on Er3+ photoluminescence in Er-implanted GaN are examined.

Subjects :: Gallium nitrate -- Research
Photoluminescence -- Observations
Physics

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