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Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling
- Source :
- IEEE Transactions on Electron Devices. July, 2001, Vol. 48 Issue 7, p1366, 8 p.
- Publication Year :
- 2001
-
Abstract
- Research into the measurement of tunneling currents through gate oxides is presented. A model which predicts electron tunneling from the conduction and valence band and hole tunneling from the valence band in CMOS systems is proposed.
Details
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.78924357