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Analysis of SAW properties of epitaxial ZnO films grown on R-Al[subscript 2]O[subscript 3] substrates
- Source :
- IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. Sept, 2001, Vol. 48 Issue 5, p1389, 6 p.
- Publication Year :
- 2001
-
Abstract
- Piezoelectric properties of epitaxial ZnO thin films grown on R-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) are examined. High quality epitaxial films with films with atomically sharp film-substrate interfaces were obtained.
Details
- ISSN :
- 08853010
- Volume :
- 48
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.79236854