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Doping-induced losses in AIAs/GaAs distributed Bragg reflectors
- Source :
- Journal of Applied Physics. July 15, 2001, Vol. 90 Issue 2, p794, 7 p.
- Publication Year :
- 2001
-
Abstract
- N- and p-doped AIAs/GaAs distributed Bragg reflectors were grown using metalorganic vapor-phase epitaxy to determine doping-induced losses.
- Subjects :
- Semiconductor doping -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 90
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.79280361