Uniaxial stress dependence of the binding energy of shallow donor impurities in GaAs-(Ga,AI) As quantum dots

Authors :: Oyoko, H.O.
Duque, C.A.
Porras-Montenegro, N.
Source :: Journal of Applied Physics. July 15, 2001, Vol. 90 Issue 2, p819, 5 p.
Publication Year :: 2001
Abstract: Parallelepiped-shaped GaAs-(Ga,AI)As quantum dots were investigated to determine the effects of uniaxial stress on binding energies of shallow donor impurities.

Subjects :: Parallelepiped -- Observations
Quantum chemistry -- Research
Semiconductors -- Impurity distribution
Physics

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