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Electrical instability of low-dielectric constant diffusion barrier film (a-SiC:H) for copper interconnect
- Source :
- IEEE Transactions on Electron Devices. Oct, 2001, Vol. 48 Issue 10, p2375, 5 p.
- Publication Year :
- 2001
-
Abstract
- Electrical instabilities of a-SiC:H film during electric-field stress are examined. A dialectric polarization model is proposed to explain high electric-field instability.
Details
- ISSN :
- 00189383
- Volume :
- 48
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.79800131