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Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

Authors :
Jeon, Sanghoon
Park, Hyuen-Min
Hong, Songcheol
Source :
IEEE Transactions on Electron Devices. Oct, 2001, Vol. 48 Issue 10, p2442, 4 p.
Publication Year :
2001

Abstract

A procedure for implementing a ballast resistor is described. The extended ledge is used as a ballast resistor and for passivation.

Subjects

Subjects :
Bipolar transistors -- Research
Resistors -- Research
Transistors -- Research
Business
Electronics
Electronics and electrical industries

Details

ISSN :
00189383
Volume :
48
Issue :
10
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.79801118

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