Vapor Deposition of Copper-Manganese Interconnects

Authors :: Gordon, Roy Gerald
Feng, Jun
Li, Kecheng
Gong, Xian
Source :: Quick submit: 2017-01-26T14:10:09-0500, Gordon, Roy G.; Feng, Jun; Li, Kecheng; Gong, Xian. 2016. Vapor Deposition of Copper-Manganese Interconnects. In Proceedings of IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), San Jose, CA, May 23-26, 2016.
Publication Year :: 2016
Publisher :: IEEE, 2016.
Abstract: Chemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very narrow through-silicon-vias, as well as tiny and robust flexible wires between chips. Silica insulating layers can be made by a super-conformal and rapid atomic layer deposition (ALD) process.<br />Chemistry and Chemical Biology<br />Engineering and Applied Sciences

Subjects :: interconnects
through silicon vias
chemical vapor deposition
copper
manganese
diffusion barrier
void-free filling

Language :: English
Database :: Digital Access to Scholarship at Harvard (DASH)
Journal :: Quick submit: 2017-01-26T14:10:09-0500, Gordon, Roy G.; Feng, Jun; Li, Kecheng; Gong, Xian. 2016. Vapor Deposition of Copper-Manganese Interconnects. In Proceedings of IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), San Jose, CA, May 23-26, 2016.
Publication Type :: Conference
Accession number :: edshld.1.30353762
Document Type :: Conference Paper
Full Text :: https://doi.org/10.1109/iitc-amc.2016.7507723