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Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Authors :
Johnson, E. S
Compton, W. D
Publication Year :
1971
Publisher :
United States: NASA Center for Aerospace Information (CASI), 1971.

Abstract

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Subjects

Subjects :
Physics, Solid-State

Details

Language :
English
Database :
NASA Technical Reports
Notes :
JPL-952383, , DAAB07-67-C-0199
Publication Type :
Report
Accession number :
edsnas.19720044396
Document Type :
Report