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Development of ion-implantation confined, shallow mesa stripe (Pn,Sn)Te/Pb(Te,Se) DH laser diodes
- Publication Year :
- 1983
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1983.
-
Abstract
- Preliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.
- Subjects :
- Lasers And Masers
Subjects
Details
- Language :
- English
- Database :
- NASA Technical Reports
- Notes :
- NAG1-48
- Publication Type :
- Report
- Accession number :
- edsnas.19840060516
- Document Type :
- Report