Effects of 1 MeV electrons and 10 MeV protons on the performance and reflectance of thin BSR cells

Thin silicon cells with BSR's were irradiated with 1 MeV electrons on either the front or back side of the cell. There were two types of cells, a 10 ohm-cm with a BSF and a 0.15 ohm-cm without a BSF. Data on the electrical performance and reflectance are given for various fluence levels of 1 MeV electrons for both type cells and 10 MeV protons for the 10 ohm-cm cell.