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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
- Source :
- Applied Physics Letters. 58
- Publication Year :
- 1991
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1991.
-
Abstract
- Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W/sq cm, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.
- Subjects :
- Electronics And Electrical Engineering
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 58
- Database :
- NASA Technical Reports
- Journal :
- Applied Physics Letters
- Publication Type :
- Report
- Accession number :
- edsnas.19910053891
- Document Type :
- Report
- Full Text :
- https://doi.org/10.1063/1.104902