The -SiH vibrational stretch as an indicator of the oxidation state of silicon in a cometary or asteroidal regolith

It has been experimentally shown that the position of the -SiH fundamental vibrational stretch is very sensitive to the chemical environment surrounding the Si atom. Si in an oxidizing environment will display an -SiH feature near 4.4 microns, whereas Si in a reducing grain could be responsible for a feature at 4.74 microns. It is further shown that, as an oxidized grain is reduced, the -SiH fundamental shifts to longer wavelengths through a series of intermediate bands.