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Quantifying Low Energy Proton Damage in Multijunction Solar Cells
- Source :
- Proceedings of the 19th Space Photovoltaic Research and Technology Conference.
- Publication Year :
- 2007
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 2007.
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Abstract
- An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP2/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code (SRIM) is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modelling results show that, in the space environment, the solar cell will experience a uniform damage distribution through the active region of the cell. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated.
- Subjects :
- Space Sciences (General)
Subjects
Details
- Language :
- English
- Database :
- NASA Technical Reports
- Journal :
- Proceedings of the 19th Space Photovoltaic Research and Technology Conference
- Publication Type :
- Report
- Accession number :
- edsnas.20090022303
- Document Type :
- Report