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Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment
- Source :
- Applied Physics Letters. 117(5)
- Publication Year :
- 2020
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 2020.
Details
- Language :
- English
- ISSN :
- 10773118 and 00036951
- Volume :
- 117
- Issue :
- 5
- Database :
- NASA Technical Reports
- Journal :
- Applied Physics Letters
- Notes :
- ECCS-1542160, , 80NSSC17K0768, , DE-AR0000868
- Publication Type :
- Report
- Accession number :
- edsnas.31144629232449
- Document Type :
- Report
- Full Text :
- https://doi.org/10.1063/5.0018473