Laser and Electron Beam Processing of Semiconductors: CW Beam- Recrystallized Polysilicon as a Device-Worthy Material

Research on the use of directed energy sources, particularly cw lasers and electron beams, for semiconductor processing operations has been carried out at Standford under the principal sponsorship of DARPA since January 1, 1978. Over the two years from January 1, 1978 to December 31, 1980, research effort has been concentrated on three principal topics: (1) Use of lasers and electron beams for annealing ion implanted silicon under solid phase conditions; (2) Use of lasers and arc sources fro recrystallization of thin polysilicon films and a study of the device potential of this material; and (3) Use of cw lasers and electron beams for promoting metal silicide reactions. In the following report we collect papers that describe the cw beam recrystallization of thin polysilicon films and the use of this material for device and integrated circuit fabrication. A subsequent report will collect and summarize papers on silicide formation.
Sponsored in part by DARPA.