S-I-S mm-Wave Mixers and Detectors.

This program is an effort to achieve the ultimate goal of fabricating refractory superconducting S-I-S mixer devices for operation in mm-wave receivers in the quantum mode and in the 8-10 K temperature range. The following progress has been made toward the above goal: (1) development of in-house capability of depositing niobium carbonitride films (Nb (x) N(y) of device quality with transition temperatures to approx. 16 K; (2) development of NbC(x)N(y):aSi:Nb and NbC(x)N(y):Ge:Nb devices of very high quality; (3) fabrication and successful operation of niobium based S-I-S mixer chips; and (4) fabrication and evaluation of aSi and Ge barrier all-NbC(x)N(y) devices. NbC(x)N(y):Ge:Nb devices have been fabricated with chemical vapor deposited (CVD) polycrystalline arsenic-doped germanium barriers. All-Nb-S-I-S mixer chips were fabricated and sent to Goddard Institute for Space Studies to be evaluated. The noise temperature was approx. 60 K and the conversion loss of 5 dB. These results are comparable to Pb alloy junction results. A second-generation mixer was designed by GISS.