Fabrication of Submicron-Wide Lines with Shadow Depositions.

A method of fabricating lines of submicron width, comprising the steps of: providing a substrate, depositing a first layer of metal upon the substrate; spinning a photoresist layer on the metal; patterning the photoresist layer; etching the metal to undercut the photoresist edge, e.g. with a mixture for approximately ten minutes at room temperature; depositing a second layer of metal at an angle 01 to the photoresist edge, thereby defining a long, submicron-wide opening to the underlying substrate; depositing a chosen material, for example, metallic or semiconductor, for the bridge onto the substrate at an angle of 02 through the submicron-wide opening; and removing undesired material surrounding the bridge by dissolving the photoresist in hot acetone followed by stripping the remaining two layers of metal with etchant. (Author)
Supersedes PAT-APPL-344 341-82 dated 1 Feb 82.