Wideband Monolithic Microwave Amplifier Study.

The detailed study of factors limiting the performance of microwave monolithic distributed amplifiers utilizing GaAs(Gallium Arsenide) FETS(Field Effect Transistors) is continued. New expressions for gain, attenuation constant, phase constant and optimum numbers of devices are given. A sensitivity analysis is carried out and a computer program to analyze amplifier performance and aid in design is presented. The report concludes with a practical design for an 8-device amplifier from 2 to 20 GHz having a gain of 4.75 dB at 20 GHz. (Author)