Cross-Sectional Atomic Force Microscopy of ZnSe-Based Laser Diodes

Cleaved facets of ZnBeMgSe-based lasers with different design of active region have been studied by means of the cross-sectional atomal (friction) force microscopy (AFM and LFM). A difference in function coefficients has been successfully exploited to image basic layers of the laser diodes. The Be-containing cladding layers and the waveguide area are revealed as regions of lower friction as compared to a GaAs substrate. Elastic strains accumulated at the layer boundaries are displayed via nanometer-high steps and undulations forming in the morphology of the cleaved facets. A remarkable reduction of the elastic strain in the active region containing a (Zn, Cd)Se quantum well has been found for the laser with the specially designed alternately-strained superlattice in the waveguide.
Pres: 7th Int Symp Nanostructures: Physics and Technology; St Petersburg, Russia. 14-18 Jun 1999. p220-223. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings