Space-Charge Spectroscopy of Self-Assembled Quantum Dots InAs in GaAs

Authors :: SAINT PETERSBURG STATE UNIV (RUSSIA)
Bazlov, N. V.
Vyvenko, O. F.
Trofimov, O. A.
Egorov, A. Y.
Kovsh, A. R.
SAINT PETERSBURG STATE UNIV (RUSSIA)
Bazlov, N. V.
Vyvenko, O. F.
Trofimov, O. A.
Egorov, A. Y.
Kovsh, A. R.
Source :: DTIC AND NTIS
Publication Year :: 1998
Abstract: Semiconducting structure containing the planes of self assembled InAs quantum dots (QD) in the GaAs matrix are studied by means of junction space charge spectroscopy methods. The effects associated with low temperature GaAs covering layer, with the wetting layer (WL) and with QDs itself are separated. It is found that DLTS signal in the structures with the high density of the QD exhibits not usual properties. A new model is proposed that takes into account the electron capture from the free electron "lake" arising due to a large repulsive barrier of the QD planes.<br />Pres: 6th Int Symp Nanostructures: Physics and Technology; St Petersburg, Russia. 22-26 Jun 1998. p432-435. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings

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