Observation of a Martensitic Transition in the Raman Spectra of Ordered GaInP

We have observed a strong dependence of the intensity of the ordering-induced phonon bands on thermal treatment (rapid cooling and annealing) in Ranmn spectra (RS) of CuPt(sub-B) ordered Ga(0.5)In(0.5)P alloys. The changes of the Raman intensity occur only in diagonal backscattering configuration: y'\\ 1-BAR,1,0, where the polarization of light is parallel to the mirror planes of the ordered structure. We found that there are at least two different intensity distributions of the optical phonon bands the appearance of which is determined by thermal treatment and the alloy film thickness. The bond polarizability model analysis shows that the observed RS behaviour can be described in terms of the order-disorder martensitic transition on trigonal lattice sites.
Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 22 Jun 1998, p444-447. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings