The Effect of 1.06 mu m Illumination on the Photoluminescence of TnAs/GaAs Quantum Dots

Authors :: RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Mazurenko, D. A.
Scherbakov, A. V.
Akimov, A. V.
Fedorov, D. L.
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Mazurenko, D. A.
Scherbakov, A. V.
Akimov, A. V.
Fedorov, D. L.
Source :: DTIC AND NTIS
Publication Year :: 1998
Abstract: Optical experiments with self-organised InAs/GaAs quantum dots (QD) show high quantum efficiency of photoluminescence (PL) which is important for laser applications. However the channels of nonradiative carrier recombination which competes with PL in QDs are not understood yet. In the present contribution we study the effect of enhancement of PL quantum efficiency of InAs/GaAs QDs induced by subband 1.06 micrometer illumination.<br />Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 22-26 Jun 1998. p226-227. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings

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