Radiative Characteristics of InAs/InGaAs/InP Quantum Dot Injection Lasers

Authors :: RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Kopchatov, V. I.
Zaitsev, S. V.
Gordeev, N. Y.
Egorov, A. Y.
Kovsh, A. R.
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Kopchatov, V. I.
Zaitsev, S. V.
Gordeev, N. Y.
Egorov, A. Y.
Kovsh, A. R.
Source :: DTIC AND NTIS
Publication Year :: 1998
Abstract: Quantum dot (QD) heterostructures have recently became the subject of the intensive research. tnjection lasers with an active region based on InGaAs/AlGaAs QD have shown ultralow threshold current density (J(subth)). However the emission wavelength of QDs formed on GaAs substrate is limited by the value of 1.3 microns. It has been previously shown that the QD emission range can be extended up to 2 microns by embedding the InAs QDs into an InGaAs matrix grown on InP substrate. In this work we study threshold, tempemture and power characteristics of InAs/InGaAs/InP injection lasers.<br />Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia, 22 Jun 1998. p402-405. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings

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