Spin-Orbit Interaction in AlGaAs/GaAs P-Type Quantum Wells - A Possible Explanation of the 'Metal-Insulator' Transition Observed in Two-Dimensional Hole Systems

We have performed a calculation of the temperature dependence of the weak-localization correction to resistance in a AlGaAs/GaAs p-type quantum well. In such systems where the spin orbit coupling by far dominates the energy dispersion, we find that the spin relaxation time becomes comparable with the estimated value of the phase coherence time at sufficiently low temperatures and low hole densities. We wish to suggest this crossover between these different relaxation times as a possible explanation of the experimentally observed 'metal-insulator' transition in two- dimensional hole systems.
This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings