Back to Search
Start Over
Boron diffused emitters passivated with Al2O3 films
-
Abstract
- In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation.<br />Peer Reviewed<br />Postprint (published version)
Details
- Database :
- OAIster
- Notes :
- 4 p., Masmitja, G. [et al.]. Boron diffused emitters passivated with Al2O3 films. A: Spanish Conference on Electron Devices. "Proceedings of the 2013 Spanish Conference on Electron Devices: CDE 2013: February 12-14, 2013: Valladolid, Spain". Valladolid: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 329-332., English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn855788564
- Document Type :
- Electronic Resource