High-Density 3-D IC Integration Technology for Mixed-Signal Microsystems

We present the results of the development of high-density 3-D interconnect technology that is applicable to the integration of heterogeneous integrated circuits. The technology relies on through-silicon vias, advanced thinning of silicon wafers, and copper/tin-copper solid-liquid diffusion bonding to produce vertical interconnects at a density of 1 x 10(exp 6)/sq cm. The processing approach allows for the integration of known-good-die in either die-to-die or die-to-wafer bonding configurations, providing the flexibility desirable for the implementation in mixed-signal microsystems.
See also ADB387878. Presented at the GOMACTech-13 Government Microcircuit Applications and Critical Technology Conference (38th) on Microelectronics for Net-Enabled and Cyber Transformational Technologies held in Las Vegas, Nevada, on 11-14 March 2013, p641-644.