Characterization of GaInN/GaN quantum wells through surface plasmon coupling.

Authors :: Iida, Daisuke
Chen, Yuntian
Ou, Yiyu
Fadil, Ahmed
Kopylov, Oleksii
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
Ou, Haiyan
Iida, Daisuke
Chen, Yuntian
Ou, Yiyu
Fadil, Ahmed
Kopylov, Oleksii
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
Ou, Haiyan
Source :: Iida , D , Chen , Y , Ou , Y , Fadil , A , Kopylov , O , Iwaya , M , Takeuchi , T , Kamiyama , S , Akasaki , I & Ou , H 2013 , ' Characterization of GaInN/GaN quantum wells through surface plasmon coupling. ' , 60th JSAP Spring Meeting , Kanagawa , Japan , 27/03/2013 - 30/03/2013 .
Publication Year :: 2013

Database :: OAIster
Journal :: Iida , D , Chen , Y , Ou , Y , Fadil , A , Kopylov , O , Iwaya , M , Takeuchi , T , Kamiyama , S , Akasaki , I & Ou , H 2013 , ' Characterization of GaInN/GaN quantum wells through surface plasmon coupling. ' , 60th JSAP Spring Meeting , Kanagawa , Japan , 27/03/2013 - 30/03/2013 .
Notes :: application/pdf, English
Publication Type :: Electronic Resource
Accession number :: edsoai.ocn893889431
Document Type :: Electronic Resource

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