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SOI thermal impedance extraction methodology and its significance for circuit simulation
- Publication Year :
- 2001
-
Abstract
- The buried-oxide in SOI MOSFET inhibits heat dissipation in the Si film and leads to increase in transistor temperature. This paper reports a simple and accurate characterization method for the self-heating effect (SHE) in SOI MOSFET. The ac output conductance at a chosen bias point is measured at several frequencies to determine the thermal resistance (R-th) and thermal capacitance (C-th) associated with the SOI device. This methodology is important to remove the misleadingly large self-heating effect from the de T-V data in device modeling. Not correcting for SHE mag lead to significant error in circuit simulation. After SHE is accounted for, the frequency-dependent SHE may be disabled in circuit simulation without sacrificing the accuracy, thus providing faster circuit simulation for high-frequency circuits.
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn895573197
- Document Type :
- Electronic Resource