Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing

MLA

00293887, et al. Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing. 2008. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.ocn957830036&authtype=sso&custid=ns315887.

APA

00293887, 80225078, Yamaji, K., Noborio, M., Suda, J., & Kimoto, T. (2008). Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing.

Chicago

00293887, 80225078, Kazuki Yamaji, Masato Noborio, Jun Suda, and Tsunenobu Kimoto. 2008. “Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistor by High-Temperature Annealing.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.ocn957830036&authtype=sso&custid=ns315887.