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Superconductivity in CuxBi2Se3 and its Implications for Pairing in the Undoped Topological Insulator

Authors :
Hor, Y.S. (author)
Williams, A.J. (author)
Checkelsky, J.G. (author)
Roushan, P. (author)
Seo, J. (author)
Xu, Q. (author)
Zandbergen, H.W. (author)
Yazdani, A. (author)
Ong, N.P. (author)
Cava, R.J. (author)
Hor, Y.S. (author)
Williams, A.J. (author)
Checkelsky, J.G. (author)
Roushan, P. (author)
Seo, J. (author)
Xu, Q. (author)
Zandbergen, H.W. (author)
Yazdani, A. (author)
Ong, N.P. (author)
Cava, R.J. (author)
Publication Year :
2010

Abstract

Bi2Se3 is one of a handful of known topological insulators. Here we show that copper intercalation in the van der Waals gaps between the Bi2Se3 layers, yielding an electron concentration of ?2×1020??cm-3, results in superconductivity at 3.8 K in CuxBi2Se3 for 0.12?x?0.15. This demonstrates that Cooper pairing is possible in Bi2Se3 at accessible temperatures, with implications for studying the physics of topological insulators and potential devices.<br />Kavli Institute of Nanoscience<br />Applied Sciences

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1008822360
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.1103.PhysRevLett.104.057001