Pentacene organic thin film transistors with anodized gate dielectric

A low temperature high quality gate dielectric process for bottom gate organic thin film transistors (OTFT) is introduced which is compatible to plastic substrates. The Al2O3 dielectric is grown from the aluminum gate electrode by anodic oxidation at room temperature and exhibits an exceptionally good electrical performance even for thin layers of 50 nm. Finding an electrolyte which significantly reduces dielectric charges was instrumental for the desired OTFT application. The electrolyte and substrate dependent behaviour was characterized and compared to different dielectrics to point out the advantages of anodic oxidized aluminum. The characteristics of pentacene bottom contact OTFTs realized with anodized Al2O3 gate dielectric on glass and plastic substrates are presented.
Electronic Instrumentation Laboratory
Electrical Engineering, Mathematics and Computer Science