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Efficiency enhancement of InGaN amber MQWs using nanopillar structures
- Source :
- Ou , Y , Iida , D , Liu , J , Wu , K , Ohkawa , K , Boisen , A , Petersen , P M & Ou , H 2018 , ' Efficiency enhancement of InGaN amber MQWs using nanopillar structures ' , Nanophotonics , vol. 7 , no. 1 , pp. 317-322 .
- Publication Year :
- 2018
-
Abstract
- We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
Details
- Database :
- OAIster
- Journal :
- Ou , Y , Iida , D , Liu , J , Wu , K , Ohkawa , K , Boisen , A , Petersen , P M & Ou , H 2018 , ' Efficiency enhancement of InGaN amber MQWs using nanopillar structures ' , Nanophotonics , vol. 7 , no. 1 , pp. 317-322 .
- Notes :
- application/pdf, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1020644407
- Document Type :
- Electronic Resource