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Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

Authors :
Kumar, Rakesh P
Mahapatra, Santanu
Kumar, Rakesh P
Mahapatra, Santanu

Abstract

In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.

Details

Database :
OAIster
Notes :
application/pdf, http://eprints.iisc.ac.in/36200/3/TNANO_Rakesh_10.pdf, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1057442890
Document Type :
Electronic Resource